MAY 20259 APACAPACTHE FUTURE OF CODE STORAGEcould enhance energy efficiency and performance in embedded systems.HOWEVER, THEIR ADOPTION HAS BEEN LIMITED BY SEVERAL CHALLENGES:· Reliability concerns, including retention, endurance, and read/write disturbances.· Higher operating currents, which necessitate larger transistors, increasing chip size.· Manufacturing costs, as these memories require specialized materials and processes, making large-scale production more expensive than Flash memory.While work continues to improve these technologies, their widespread adoption will depend on overcoming these issues.Potential Disruptor: Cross point ArchitecturesA second potential disruptor is cross-point memory, where a memory element is located at the intersection of a bit line and a perpendicular word line. These architectures are attractive because they are transistor-free, allowing higher density than traditional memory. A device known as a selector is included in series with the memory element for two functions. First, when the cell is not selected, it blocks current from flowing through the memory element, as well as prevents too much voltage from being placed on the memory element. Second, the selector regulates how much current passes through the memory element when it is selected, allowing targeted operation specs to be met. Some implementations, such as selector-only memory (SOM), combine the memory and selector function in a single device.CROSS-POINT MEMORY HAS SEVERAL ADVANTAGES, SUCH AS:· A transistor-free architecture completely avoids short-channel effects.· Cross-point access inherently allows XiP.· Peripheral circuitry can be placed underneath the memory array, reducing chip area.· The cross-point memory can be vertically stacked into 3D structures.However, despite these advantages, cross-point architectures face significant production and integration challenges. The need for high-performance selectors, variability issues, and the cost of new fabrication processes currently limit their adoption.CONCLUSIONFor the near future, NOR Flash will remain the dominant choice for code storage under 1 Gb, while NAND Flash (2D and 3D) will continue to be the preferred option for larger capacities. The fundamental limitations of flash memories create opportunities for alternative memory technologies, but none have yet proven to be a commercially viable replacement, especially for Tb-scale capacities typical of 3D NAND.If future advancements in MRAM, ReRAM, PCM, FeRAM, or SOM lead to improved reliability, lower power consumption, and cost-effective manufacturing, these technologies could challenge flash memory. However, until these barriers are overcome, NOR Flash and NAND Flash will continue to be the backbone of code storage solutions. Despite advancements in new memory technologies, NOR Flash and NAND Flash will remain the backbone of code storage solutions until challenges in reliability, cost, and scalability are overcome
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